Abstract
A simple method for covering titanium dioxide particles with a polythiophene film by chemical preparation was developed. The resulting nanocomposites consisted of a titanium dioxide core with a grain size of 25–250 nm and a polythiophene shell between 1 and 2 nm thickness. The composites were characterized by scanning electron microscopy, thermogravimetry, X-ray photoelectron spectroscopy, cyclovoltammetry, impedance spectroscopy and photocurrent spectroscopy. The content of polythiophene in the composite (determined by thermogravimetry), was between 2% and 5%. Disk-like electrodes were prepared by pressing and then characterized by various electrochemical methods. A reversible redox potential of the polythiophene of +1.0 V (NHE) was determined by cyclic voltammetry. The reduced form of polythiophene behaved as a p-type semiconductor so that the composite with n-type TiO 2 contained the properties of a p/n-junction. In the photocurrent spectra (depending on the applied potential), the characteristic anodic peaks of the TiO 2 at λ=320 nm and cathodic peaks of the polythiophene around λ=500 nm were found. A new cathodic peak observed at 370 nm was explained as a new feature of the pn interface.
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