Abstract
Screen-printed thick films of Zn x Cd1−x S have been prepared in the entire composition range from pure CdS to pure ZnS and sintered at 800° C on alumina substrates. Their structural and electrical properties have been studied as a function ofx. X-ray diffraction analysis of Zn x Cd1−x S established the presence of wurtzite structure for the range 0 ≤x ≤ 0.8, whereas forx = 1.0 the presence of the sphalerite structure of ZnS is observed. The lattice parametersa andc vary withx in accordance with Vegard's law. Scanning electron micrographs reveal an enhancement in porosity with increasingx. The dark electrical resistivity of the film increases withx in the range 0 ≤x ≤ 0.6, but beyond this range it starts decreasing. Photoconductivity is studied as a function ofx. An effect of H2 annealing on the dark resistivity and photo-sensitivity is established.
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