Abstract
High pressure water vapor annealing (HPWVA) was performed on GaN metal/oxide semiconductor capacitor with Al2O3 film prepared using atomic-layer deposition. The fixed charge density and interface trap density are significantly improved by applying HPWVA (0.5 MPa at 400 °C for 30 min). These results are mainly related to a reaction of the Al2O3/GaN structure with the diffused active H2O monomer derived from HPWVA. It was found that the oxidation and Al–OH formation occurred in the Al2O3 film and thin gallium oxide was formed at the Al2O3/GaN interface.
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