Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

Chin-Lung Cheng,Bau-Tong Dai,Ming-Yen Lee,Chien-Wei Liu

doi:10.1155/2011/125846

Abstract

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

Highlights

Carbon nanotube field-effect transistors (CNTFETs) have been explored in nanoelectronics to realize desirable device characteristics [1,2,3,4,5,6,7,8,9,10,11]
Various methods were used to synthesize the carbon nanotube networks (CNTNs), some electrical characteristics of CNTNs fabricated by alcohol catalytic chemical vapor deposition (CVD) (ACCVD) remain not totally understood
Since the results show that the C value of CNTNs synthesized by ACCVD is to be around 57 cm−1 nm2, most semiconducting

Summary

Introduction

Carbon nanotube field-effect transistors (CNTFETs) have been explored in nanoelectronics to realize desirable device characteristics [1,2,3,4,5,6,7,8,9,10,11]. Both n-type and p-type single-walled carbon nanotube (SWCNT) field-effect transistors (FETs) with top-gate electrodes in the conventional metal-oxidesemiconductor field-effect transistor (MOSFET) structures were demonstrated [1]. SWCNT random network thin film transistor with a 105 of on/off ratio and a ∼8 cm2/C-s of field-effect mobility was demonstrated using water-assisted plasma-enhanced CVD (PECVD) [17]. Attempt to explore some characteristics to gain better physical and electrical insights into the properties of CNTN field-effect transistors (CNTNFETs)

Methods

Results

Conclusion