Abstract
The physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals embedded in high-? HfO2/Al2O3 films in an n-Si/SiO2/HfO2/RuO2/Al2O3/Pt memory structure have been investigated. A small size of <10 nm and high-density of ~ 1.6 × 1012/cm2 for the RuO2 nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO2 metal nanocrystals and all high-? films have been confirmed by x-ray photoelectron spectroscopy (XPS). A large hysteresis memory window of ?V?10.8 V at a gate voltage of Vg = ±10 V has been observed for RuO2 nanocrystal memory capacitors. A hysteresis memory window of ?V?2.4 V has also been observed under a small sweeping gate voltage of Vg = ±5 V, due to charge storage in the RuO2 metal nanocrystals. The RuO2 metal nanocrystal memory capacitors have a large breakdown voltage of -15V. A low charge loss of 15% is observed after 10 years of retention.
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