Physical and Dielectric Properties of (1–x)PbZrO3·xBaTiO3 Thin Films Prepared by Chemical Solution Deposition

Abstract

Physical and dielectric properties of (1–x)PbZrO3·x BaTiO3 thin films prepared by a chemical coating process have been investigated as a function of BaTiO3 (x) content (0≤x≤0.2). Changing the molar ratio between propylene glycol and water prior to the deposition optimized the chemical precursors. (1–x)PbZrO3‐x BaTiO3 thin films that contained a majority of perovskite phase, but also contained large amounts of other phases, were fabricated. These films could withstand fields of 250 kV/cm at 1 kHz. The microstructure of the thin films was found to depend on the BaTiO3 content. The phase transition from antiferroelectric to ferroelectric was gradually induced as the BaTiO3 content increased. A maximum dielectric constant of ∼809 was obtained at the composition of x= 0.1. A maximum dielectric constant of ∼809 was obtained at the composition of x= 0.1. A thin film at the low‐field antiferroelectric‐ferroelectric phase boundary with x= 0.05 exhibited the highest Psat and Pr values. The maximum values of these were 45 and 31 μC/cm2, respectively.