Abstract
Processes at the dark hole discharge surface of photoconducting anthracene in contact with aqueous inert electrolyte have been examined. O2 was shown to be consumed and anthraquinone formed due to electrolysis. Directional etching of the (001) discharge surface was shown to occur and related to (010) slip planes which were probably developed during growth from the melt. Significance of defects to current carrier trapping was indicated and possible mechanism of carrier discharge was discussed.
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