Abstract
This paper provides an analysis of the physical mechanisms underlying the long-term base current instability in the AlGaAs-GaAs heterojunction bipolar transistor (HBT). Such a current instability gives rise to HBT long-term current gain drift and thus is a major concern for HBT reliability. In this paper, a detailed analysis for two frequently seen base current instabilities is presented. This is followed by the development of a semi-empirical model for predicting the HBT mean time to failure (MTTF).
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