Abstract
A Zr(0.04)Ti(0.96)O(2) solid solution nanowire (NW) array was prepared and characterized in detail. Zr doping effectively changed Zr(x)Ti(1-x)O(2)'s bandgap and led to better photoelectric properties, which indicated the possibility for deep UV detector fabrication. Based on the NW array, high-performance Schottky diode UV detector with Ag electrode was fabricated. At -3 V bias, the dark current of the detector is only 5 nA, and a high photoresponse of 5.6 A/W was achieved because of the internal gain. The ratio of photocurrent to dark current is more than three orders of magnitude. The device is promising for large-area UV detector applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
