Abstract
A Zr(0.04)Ti(0.96)O(2) solid solution nanowire (NW) array was prepared and characterized in detail. Zr doping effectively changed Zr(x)Ti(1-x)O(2)'s bandgap and led to better photoelectric properties, which indicated the possibility for deep UV detector fabrication. Based on the NW array, high-performance Schottky diode UV detector with Ag electrode was fabricated. At -3 V bias, the dark current of the detector is only 5 nA, and a high photoresponse of 5.6 A/W was achieved because of the internal gain. The ratio of photocurrent to dark current is more than three orders of magnitude. The device is promising for large-area UV detector applications.
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