Abstract
Structures ITO/SiOх/n-Si are fabricated by pulverization of solutions of indium and tin chlorides on the (100) surface of silicon wafers with resistivity 4.5 Ω cm. The influence of the state of the Si surface on the efficiency of structures as photoelectric converters is investigated. It is shown that structures with an unetched surface of silicon wafers are the most efficient. Solar cells based on studied ITO/SiOх/n-Si structures with an inverse layer demonstrate an efficiency close to 16% in AM 1.5 conditions.
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