Abstract
The photovoltaic spectra of molecular beam epitaxy GaAsAl 0.25Ga 0.75As multiple quantum wells in the vicinity of the n=1 sub-bandgap region and their correlation with the corresponding photoluminescence spectra have been studied in the temperature range 2–297K. Photovoltaic and photoluminescence spectra are found to agree for the transition of the n=1 heavy- and light-hole excitons. The photovoltaic spectra in the Schottky-barrier configuration show as the relative maxima and minima at the corresponding exciton photoluminescence lines. A possible model of the observed coincidence of photoluminescence and photovoltage is discussed.
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