Abstract
We obtained photovoltaic response in pristine multilayer WSe2 by sandwiching WSe2 between top and bottom metals. In this structure, the work-function difference between the top metal and WSe2 plays a critical role in generating built-in potentials and photovoltaic responses. Our devices with Zn as top metal exhibit photo-conversion efficiencies up to 6.7% under 532 nm illumination and external quantum efficiencies in the range of 40%–83% for visible light. This work provides a method for generating photovoltaic responses in layered semiconductors without detrimental doping or exquisite heterostructures, and also advances the physics for modulating the band structures of such emerging semiconductors.
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