Abstract
ZnO thin films were deposited on a quartz substrate by an inexpensive technique of spray CVD using an ionic solution of zinc acetate. With the proper deposition parameters such as T sub = 380 ° C, solution flow rate of 1.9 ml min −1 and post heat treatment in dry nitrogen, ZnO films with optical transmission of more than 81% and a sheet resistance of 30 Ω cm −2 have been obtained. The p-CdTe film (1.5 μm thick) was deposited by co-evaporation in high vacuum using effusion cells. This heterojunction was illuminated in back wall configuration. An open circuit voltage V oc between 0.48 V and 0.53 V, short circuit current density J sc = 12.5 mA cm −2, and an electrical conversion efficiency η better than 3.7% have been achieved (for a device 1 cm 2 in area). If compared with a similar device reported on a single crystal p-CdTe, poor fill factor is mainly responsible for the low efficiency of the present device, and the p-CdTe layer needs improvement. The dark I–V and 1 C 2−V measurements are also shown.
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