Abstract
The photovoltaic properties of several 1 μm thick films of rf-sputtered amorphous Si (a-Si) sandwiched between lower Al electrodes and upper semitransparent Mo or Al electrodes have been investigated. After fabrication, the Al–Si–Al samples were annealed in vacuum at temperatures between 100 and 450°C. The spectral variation of the photoresponse in the wavelength region between 300 nm and 2 μm was measured. The results indicate that the optical gap of a-Si is 1.5 eV and the Schottky barrier height at the Al–a-Si interface is 0.75 eV. the current-voltage characteristics of these Schottky-type devices were investigated under illumination. Photovoltaic energy conversion efficiencies of up to 0.03% were observed for the 100 mW/cm2 white light of a tungsten-halogen lamp.
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