Abstract
An inorganic–organic photovoltaic device with a structure of [6,6]-phenyl C 61-butyric acid methyl ester and p-Si has been fabricated. The ideality factor value of the diode was found to be 2.12. This n value of the diode implies a deviation from ideal junction behavior. The p-Si/PCBM diode shows a photovoltaic behaviour with a maximum open circuit voltage V oc of 0.12 V, and short-circuit current I sc of 0.10 μA under 6 mW/cm 2 light illumination. The parasitic resistances for the diode, which are series R S and shunt R sh resistances were calculated to be 5.24 × 10 4 Ω and 1.95 × 10 7 Ω, respectively. The capacitance–voltage plot indicates a non-linear behavior, suggesting a non-uniform dopant density profile and interface irregularities of p-Si/PCBM device. The barrier height ϕ b value for the diode was found to be 0.79 eV. It is evaluated that the p-Si/PCBM diode is a photodiode with calculated electronic parameters.
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