Photovoltaic Performance of Si and SiGe Surfaces Sonochemically Activated in Dichloromethane

Abstract

Aims: To activate Si and SiGe surfaces by employing the sonochemical treatment at different operating frequencies in dichloromethane to improve the surface photovoltage signal. Background: To produce integrated electronic devices, one needs to achieve low surface and interface trap densities. In this respect, placing a passivating thin layer on Si and Ge surfaces, which saturates the electronic levels of traps and therefore affects the carrier recombination velocities at the surface, is of great interest. Objective: To demonstrate that the effectiveness of the treatment of Si and SiGe surfaces depends on the ultrasonic frequency used. Methods: Photovoltaic transients, electron microscopy, EDX spectroscopy. Result: The surface photovoltage (SPV) decay curves can be divided into rapid (τ_1) and slow (τ_2) components. The sonication effect on the SPV is different for the treatment done at about 25 and 400 kHz. The SPV signal in Si gradually increases with increasing lower-frequency sonication time, whereas the SPV enhancement on SiGe is somewhat smaller. Increasing the sonication time increases the amplitude of the τ_2 component in Si. In SiGe, the lower-frequency sonication quenches the τ_2 component yielding a nearly single-exponential decay form. This trend is even more pronounced at the higher-frequency sonication. Conclusion: The sonochemical treatments greatly intensify the formation of CxHy–Si and CxHy–Ge bonds on Si and Si1-xGex surfaces, resulting in increased SPV signals and prolonged SPV decay times. These results demonstrate that sonochemical treatment is a more effective technique to obtain stable highly passivated Si and Si1-xGex surfaces in comparison with wet chemical treatments in hydrocarbon solutions.