Abstract
Abstract Linear arrays of photovoltaic infrared sensors for thermal imaging applications are fabricated in narrow gap semiconductor layers grown heteroepitaxially on Si. Epitaxy is achieved using stacked intermediate BaF 2 SrF 2 CaF 2 buffers to overcome the large lattice-as well as thermal expansion mismatch. The arrays consist of 66 elements and cover cut-off wavelengths ranging from 3 to above 12 μm. Extrapolated resistance-area products of the best PbTe sensors (cut-off wavelengths5.7 μm) on Si are up to 20 000 Ω cm 2 at 77 K. They approach those of similar HgCdTe sensors fabricated in bulk or epitaxial material on CdTe substrates. Mean detectivities of whole PbTe on Si arrays at 90 K are as high as D JNL ∗ = 1.5×10 12 cm √ Hz / W .
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