Abstract
Linear arrays of photovoltaic IR-sensors for thermal imaging applications have been fabricated for the first time in narrow gap semiconductor layers grown heteroepitaxially on Si-substrates. Heteroepitaxy was achieved using intermediate stacked CaF 2 -BaF 2 bilayers to overcome the large lattice- and thermal expansion mismatch between Si and lead-chalcogenides. Sensors fabricated in narrow gap PbTe have ?5.7 ?m cut-off wavelength at 90K and quantum efficiencies around 70%. Resistance-area products are up to 500 ?cm2 with mean value of ?150 ?cm2 for 66 element linear arrays, well above the room temperature photon background noise limit. Sensor arrays with shorter cut-off wavelength were fabricated in the same manner in epitaxial Pb 1-x Eu x Se on fluoride covered Si-substrates.
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