Abstract
It is shown experimentally to be possible to form rectifying photosensitive heterojunctions by using the method of reactive cathodic sputtering to deposit layers of Cd2SnO4 on the surface of nand p-type CdGeP2 single crystals. It is demonstrated that photosensitivity is seen in the range between the widths of the forbidden bands of CdGeP2 and Cd2SnO4; photosensitivity is 3–4 orders of magnitude greater for n-n junctions than for n-p junctions. The parameters of polarizational photosensitivity were established and analyzed, providing evidence that the investigated system, with an n-n contact, can be used to make polarimetric photodetectors.
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