Photovoltaic characteristics of (E-Admantan fulgide thin film/P-Si single crystal) solar cell

Abstract

A hybrid organic-inorganic solar cell (HOISc) has prepared by thermal evaporation of a thin film of {E-Adamantan-2-Ylidene - 4-[1 - (2, 5-dimethyl-3furyl) ethyldene] dihydro-2,5-Furandione} as a new member of the Fulgides’ family, on a single crystal of a p-type silicon wafer (P-Si). The analysis of the dark current, voltage characteristics suggested the presence of two conduction mechanisms; thermo-ionic assisted tunnelling mechanism followed by space charge limited current (SCLC) mechanism, which dominated by a single trap level. The reverse current was interpreted regarding either Pool-Frenkel or Schottky - effect. The dark, evacuated capacitance-voltage characteristic at room temperature exhibited an abrupt nature with a built-in voltage Vbi ≈ 0.26 Volt. The width of the depletion region,W ≈ 2.22 μm. The analysis of the photovoltaic characteristic at room temperature and under illumination of (23.56 mW cm−2) helped in the determination of some solar cell parameters such as; the open circuit voltage, VOC = 0.75 V, the fill factor, FF = 0.47 and the efficiency of the cell, η ≈ 6.892%.