Abstract
This study is about the deposition of tris (2,2’-bipyridine) Ruthenium(II)-complex thin film on p-type crystalline silicon (Si) by spin coating method (Al/Ru(II)/p-Si). The characteristics parameters were evaluated from the current-voltage ( I – V ) under dark and illumination at room temperature. First, the optical properties of the organic thin film were determined from its optical absorption spectrum, and its band gap was found to be 2.74 eV. Then, the electrical parameters of the Al/Ru(II)/p-Si photodiode, such as the ideality factor (n), barrier height (Φ b I-V ) , diffusion potential, barrier height (Φ b C-V ) and carrier concentration (N a ) were calculated from the I–V and C–V measurement at room temperature. Both measurements barrier height values were compared. Cheung method was used to determine the series resistance (R s ), barrier height and ideality factor, under dark and 100 mW/cm 2 illumination conditions. The photovoltaic parameters of the studied device were investigated under illumination conditions. The open-circuit voltage and short circuit current values for the Al/Ru(II)/p-Si were found to be 439.9 x 10 -3 V and 36.6 x 10 -6 A respectively. Ruthenium(II) complex positively influences the photovoltaic performance. These results reveal that the Al/Ru(II)/p-Si built can be used as a photodiode in photovoltaic and photodetector applications.
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