Abstract
Photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPSSCs) with molybdenum oxide (MoO x ) as hole-selective layers (HSLs) were demonstrated. A H2/Ar plasma pretreatment (PPT) was incorporated into a MoO x /p-Si(100) interface, which shows the expected quality in terms of passivation. Moreover, the charge trapping characteristics of the MoO x /p-Si(100) interface were presented. The PPT parameters, including power, treated time, flow ratio of H2/Ar, and temperature, were investigated. The experimental results indicate that the Si-H bond with a relatively high intensity was demonstrated for the H2/Ar PPT. The achievement of a conversion efficiency (CE) improvement of more than 1.2% absolute from 18.3% to 19.5% for SPSSCs with H2/Ar PPT was explored. The promoted mechanism was attributed to the reduction of the interface trap density caused by the large number of Si-H bonds at the silicon substrate and MoO x interface.
Highlights
Passivated emitter and rear cell (PERC) silicon solar cells are the mainstream of the industrial solar cells today [1,2,3]
Temperature cial layer is present at the molybdenum oxide (MoOx)/Si(100) interface during MoOx evaporation [16]
The results indicate that the best result in this work is a conversion efficiency (CE) of 19.5% at deposition temperature ranging from 250 to 300°C
Summary
Passivated emitter and rear cell (PERC) silicon solar cells are the mainstream of the industrial solar cells today [1,2,3]. To increase the capture of photons by solar cells, PERC introduces two additional layers at the rear of the cell compared with SPSSCs [4]. The function of those layers is to improve the passivation of the rear side and increase the reflection of the back light [5]. PERC still have a small amount of Al back surface field (Al-BSF), which will cause recombination [6] To improve this shortcoming, transition metal oxides, such as MoO2, V2O5, and WO3, are proposed as hole-selective layers (HSLs) [7,8,9,10]. To enhance the interface characteristics of silicon and MoOx, a H2/Ar PPT was investigated
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