Abstract
Surface photovoltage versus light intensity measurements for Al on UHV-cleaved GaAs(110) surfaces demonstrate that photoinduced band flattening can determine the band bending within the semiconductor surface space charge region for metal coverages of two monolayers or less. Above coverages of a few metal monolayers, increased interfacial recombination reduces the otherwise saturated photovoltage. Absolute band bending measurements permit determination of the dipole voltage across the interfacial layer at this semiconductor-metal junction.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
