Abstract
Under proper external bias, we showed that photovoltage amplification can be achieved from an infrared hot-electron transistor, and hence the transistor structure can be used to increase the voltage responsivity of a multiple quantum well photoconductor. In addition, the ouput voltage of the transistor can be very small when there is no signal light source, similar to a photovoltaic detector. As a result, the transistor is able to dc couple to a high-gain voltage amplifier for further signal amplification without reducing its detectivity.
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