Abstract
Phototunable biomaterial‐based resistive memory devices and understanding of their underlying switching mechanisms may pave a way toward new paradigm of smart and green electronics. Here, resistive switching behavior of photonic biomemory based on a novel structure of metal anode/carbon dots (CDs)‐silk protein/indium tin oxide is systematically investigated, with Al, Au, and Ag anodes as case studies. The charge trapping/detrapping and metal filaments formation/rupture are observed by in situ Kelvin probe force microscopy investigations and scanning electron microscopy and energy‐dispersive spectroscopy microanalysis, which demonstrates that the resistive switching behavior of Al, Au anode‐based device are related to the space‐charge‐limited‐conduction, while electrochemical metallization is the main mechanism for resistive transitions of Ag anode‐based devices. Incorporation of CDs with light‐adjustable charge trapping capacity is found to be responsible for phototunable resistive switching properties of CDs‐based resistive random access memory by performing the ultraviolet light illumination studies on as‐fabricated devices. The synergistic effect of photovoltaics and photogating can effectively enhance the internal electrical field to reduce the switching voltage. This demonstration provides a practical route for next‐generation biocompatible electronics.
Highlights
Phototunable biomaterial-based resistive memory devices and understanding of their underlying switching mechanisms may pave a way toward new paradigm of smart and green electronics
We report photoactive biomemories based on carbon dots (CDs)-silk composite in which various metal anodes including Al, Au, and Ag were used to systematically study the resistive switching behavior
It is worth noting that Ag/CDs-silk/indium tin oxide (ITO) device exhibits a reversible bipolar-resistive switching property by an ultralow SET and RESET voltage which is in discrepancy with the Au- and Al-based biomemories
Summary
Phototunable biomaterial-based resistive memory devices and understanding of their underlying switching mechanisms may pave a way toward new paradigm of smart and green electronics. It is worth noting that Ag/CDs-silk/ITO device exhibits a reversible bipolar-resistive switching property by an ultralow SET and RESET voltage which is in discrepancy with the Au- and Al-based biomemories.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.