Abstract
Si-based structures have been studied by means of combined photothermoacoustic and photoelectric microscopy. Conclusion is made that the most probable cause of the thermal-wave visualization of epitaxial regions is elastic stresses arising in these regions during a production process. It is shown that spatial distribution of the elastic stresses arisen during the ion-beam implantation is visualized by thermal waves. In the near-top crack region the inhomogeneities of thermoelastic and electrical properties may be detected by thermal waves and electron-hole plasma waves. A spatial periodicity of the thermoelastic properties of the near-top crack region is found.
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