Abstract
Photothermal, photocarrier, and photoluminescence phenomena in semiconductors studied using modulated infrared (IR) radiometry are discussed. Spectrally resolved measurements are carried out using IR filters placed in front of the detector. A new approach based on modulated IR radiometry is proposed which is a valuable extension of conventional IR-spectroscopic techniques for measuring IR absorption coefficients of thick highly IR-absorbing samples and of thin films deposited on thick highly IR-absorbing substrates, as well as for the simultaneous measurement of IR absorption and photoluminescence spectra. It is also shown that spectrally resolved modulated IR radiometry measurements lead to greater accuracy than conventional approaches for estimating thermal and recombination properties of semiconductors.
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