Photothermal modulation spectroscopy of multilayered structures of amorphous silicon and amorphous silicon carbide.

Abstract

Thermal modulation spectroscopy based on a photothermal process has been applied to hydrogenated amorphous silicon (a-Si:H)--silicon carbide (a-SiC:H) multilayered structures. The temperature derivative of the absorption spectrum drastically changes from a linear to a staircase form with decreasing a-Si:H well layer thickness below 50 A\r{}. This result suggests that three-dimensional parabolic band transition is turned into subband transitions in the a-Si:H quantum well.