Abstract
The photothermal ionization spectroscopy (PTIS) has been employed to study Be shallow acceptor states in GaAs grown by MBE. We have observed the G line, D line and C line transitions which are from the ground state 1s<SUB>3/2</SUB>((Gamma) <SUB>8</SUB><SUP>+</SUP>) of Be acceptor to the first three excited odd-parity states 2p<SUB>3/2</SUB>(Gamma) <SUB>8</SUB><SUP>-</SUP>), 2p<SUB>5/2</SUB>((Gamma) <SUB>8</SUB><SUP>-</SUP>) and 2p<SUB>5/2</SUB>((Gamma) <SUB>7</SUB><SUP>-</SUP>), respectively. The transition from the ground state 1s<SUB>3/2</SUB>((Gamma) <SUB>8</SUB><SUP>-</SUP>) to the excited state 2p<SUB>1/2</SUB>((Gamma) <SUB>6</SUB><SUP>-</SUP>) is identified as well. According to the PTIS, we deduce the binding energy of Be ground state in GaAs is 28.6 mev.
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