Abstract
The photothermal beam deflection (PBD) technique utilizes a change of refractive index of the gas surrounding a sample, and a thermoelastic deformation on the sample surface induced by the heat generated as a result of the light absorption. The elastic property of the sample has been measured nondestructively and without contact using PBD. This technique was applied for the first time to the inspection of a dislocation existing in a GaAs semiconductor wafer.
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