Abstract
The optical bias dependence of the modulated photocurrent (OBMPC) is used to study the light-induced changes of sputtered a-As2Se3 and glow discharge a-Si:H films. It is found that upon strong light exposure, an increase, by an order of magnitude, in the ratio of the capture coefficient of the majority carriers by the gap states, over the free carrier mobility, c/µ, is taking place in both materials. This is interpreted as a result of the structural modifications that may take place during the light degradation enhancing the capture coefficient. The effect is completely reversible upon thermal annealing.
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