Abstract
The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSexS1-x solid solution depending on the conditions of preparation and heat treatment in various media are presented. It is shown that at x = 0.8 cadmium vacancies create a deep level with an activation energy Еv + (0.63 ± 0.02) eV, a complex of chlorine atom with a cadmium vacancy creates a level Еv + (0.43 ± 0.02) eV, as well as the fast recombination center Еv + (0.92 ± 0.02) eV. The formation of selenium vacancies due to the introduction of chlorine and its combination with cadmium leads to the appearance of a sticking level Еc - (0.19 ± 0.02) eV. CdSe0.8S0.2 films can be used to develop light emitting diodes, photo sensors, IR and visible lasers.
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