Abstract
Polycrystalline n-type CuIn3Se5 and CuIn5Se8 films with thicknesses from 0.4 to 1 μm have been grown by pulsed laser ablation of bulk p-CuIn3Se5 and n-CuIn5Se8 crystals in vacuum. The temperature dependences of the resistivities of these crystals are determined by deep donor levels with energies E D ≅ 0.2–0.3 eV. Photosensitive thin-film structures based on these films have been created for the first time and their photosensitivity spectra have been measured. The possibility of using thin CuIn3Se5 and CuIn5Se8 films in broadband photoconverters is demonstrated.
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