Abstract
Monocrystals of ternary compounds of AIIBIII2CVI4 semiconductors (HgGa2S4 and CdGa2S4) and various photosensitive structures based on them were investigated. The photoelectric properties of the structure obtained were studied using natural and linearly polarized light at 300 K. The results show that the structures created can find application as no polarized radiation photodetectors, and with allowance for high-tetragonal compression of the crystal lattice and linearly polarized radiation.
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