Abstract
Two-stage buffer n(GaSb)1 − x − y (Si2)x(GaAs)y and perfect n(GaSb) layers are grown on an pSi substrate by liquid-phase epitaxy from a tin solution-melt. It is shown that the photosensitivity of the pSi−n(GaSb)1 − x − y (Si2)x (GaAs)y structures is in the spectral range 1.0-1.6 eV, and that of the pSi − n (GaSb)1 − x − y(Si2)x(GaAs)y − n (GaSb) structures is in the range 0.62-1.15 eV.
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