Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

Abstract

The spectral dependences of photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures and structural features of epitaxial film of (Si2)1–x–y(Ge2) x (ZnSe) y solid solution were studied by atomic force microscopy. The peaks of sensitivity at photon energies of 1.60, 1.85, 2.40, and 2.54 eV due to ZnSe and Ge quantum dots in the solid solution layer were revealed.