Abstract
Data from experimental studies of the photoelectric properties of heterostructures of porous and single-crystal silicon are presented. Rectifying heterostructures with photosensitivities of up to 1 mA/W at 300 K in the spectral range 1.2–2.3 eV are obtained. Oscillations in the photocurrent due to interference of the light in the porous silicon layers are observed. The refractive index of porous silicon is estimated. The polarization dependence of the photosensitivity of the heterostructures is studied.
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