Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer

S.P Novosyadliy,A.V Pavlyshyn,V.M Gryga,V.M Lukovkin

doi:10.15330/pcss.20.4.453-456

Abstract

In this paper described researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum. Conducted experiments showed that source current changing with the type of deep centers, change of value is determined by two factors: change width of volumetric charge barrier contact layer and width of dipole layer on border section of active heterojunction layer of Si-wafer.

Highlights

Semiconductors compounds in particular aluminium gallium arsenide, nowadays widely used for creating fast digital and analog either UHF devices or IC(LSI)
That's why for practical realisation of active LSI components, for example, MESFETs used thin epitaxial layers, doped epilayers, which formed on a mono-Si wafer of large diameter > 150mm
For researching heterojunction MESFET we used an interesting method of photoinduced current spectroscopy which included in our manual about electrophysical diagnostics of submicron LSI structures

Summary

Introduction

Semiconductors compounds in particular aluminium gallium arsenide, nowadays widely used for creating fast digital and analog either UHF devices or IC(LSI). That's why for practical realisation of active LSI components, for example, MESFETs used thin epitaxial layers, doped epilayers, which formed on a mono-Si wafer of large diameter > 150mm. This technology provides creating deep impure levels which sufficiently influence parameters and characteristics of active components. For researching heterojunction MESFET we used an interesting method of photoinduced current spectroscopy which included in our manual about electrophysical diagnostics of submicron LSI structures. Еlectrophysical diagnostics was performed using test structures, in particular hilotrons for estimating speed and mobility of charge carriers. Purpose of our research was the research of essential physics mechanisms which determine photosensitivity of GaAs MESFETs under their illumination in impure zone absorption spectrum which corresponds to the middle of GaAs band gap – this is important during their using as a photodetector for optical receiver module in fiber optic transmission systems

Analysis of physical processes in heterojunction MESFETs

Experimental data and results

Conclusions