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Abstract
Heterojunctions of the n-Ox/p-InP type have been obtained for the first time by means of thermal oxidation. Stationary current-voltage characteristics of the heterojunctions were measured and the photovoltaic effect in these structures have been studied under exposure to natural and linearly polarized radiation. Specific features of the current transfer and the broadband photosensitivity are discussed. The proposed method of thermal oxidation can be used for the fabrication of effective InP-based heterophotocells.
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