Year-end Sale % OFF 
Abstract
Results are presented of investigations of the photoelectric properties of nitrided layer/GaAs (GaP) heterojunctions prepared by plasma treatment of GaAs and GaP crystals in the presence of nitrogen ions. The heterojunctions exhibited broad-band photosensitivity relative to the intensity of the natural radiation. It was established that when linearly polarized radiation is obliquely incident on the surface of nitrided layers, polarization photosensitivity occurs which is controlled by the angle of incidence Θ and increases proportionately as Θ2. The spectral dependences of the induced photopleochroism are attributed to the antireflecting properties of the wide-gap layers. Nitrided-layer heterojunctions can be used as broad-band photoanalyzers for linearly polarized radiation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
