Abstract
Layers of a-C:H were grown on c-Si wafers by the glow discharge method in a CH4 + Ar gaseous mixture. The electrical and photoelectric properties of a-C:H/c-Si heterojunctions were studied. It was found that the heterojunctions display rectification and broad-band photovoltaic effects. It is shown that the polarization sensitivity in these structures occurs at an oblique incidence of linearly polarized light under the illumination of the surface coated with a-C:H layers. The observed oscillations in the spectrum of the coefficient of induced photopleochroism are attributed to the interference of light in these layers.
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