Abstract
By using a Mach-Zehnder interferometer, we evaluated photosensitivity in silica-based waveguides deposited by atmospheric pressure vapor deposition. Our results show that photosensitivity with ArF excimer laser irradiation was ten times greater than photosensitivity with KrF excimer laser irradiation. ArF excimer laser irradiation induced a refractive-index change of greater than 2 x 10(-3) at 1.55 mum and a birefringence between TE and TM modes of less than 6 x 10(-5). It has also been determined that the photoinduced absorption change of 90 dB/mm at 210 nm cannot account for a refractive-index change greater than 10(-3).
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