Photosensitive structures using Hg1−xCdxTe solid solutions grown by molecular beam epitaxy

Abstract

Results of a study of the parameters of Hg1−xCdxTe epitaxial structures produced by molecular beam epitaxy are presented. Results are given for measurements of the recombination and spectral properties and the noise properties of photosensitive elements have been studied. A high detectivity was obtained over a broad wavelength range. The parameters of MOS photodetector elements based on isotype n-Hg1−xCdxTe heterostructures with compositions x=0.2 and x=0.3 were estimated and compared with experimental data on the charge carrier accumulation time in MOS structures in the nonequilibrium depletion regine.