Photosensitive structures based on single-crystal silicon and phthalocyanine CuPc: Fabrication and properties

Abstract

Vacuum thermal deposition of phthalocyanine CuPc onto the surface of crystalline silicon and subsequent magnetron sputtering of ZnO:Al are used to form n-ZnO:Al-p-CuPc-n-Si photosensitive structures for the first time. The highest photosensitivity of these structures S ≈20 V/W is attained if the ZnO side of the structure is illuminated and is observed in the photon-energy range 1–3.2 eV at T=300 K. An induced photopleochroism is observed if the linearly polarized light is incident obliquely on the ZnO side; the magnitude of the photopleochroism oscillates as a result of the interference of linearly polarized light in the ZnO film. It is concluded that the suggested structures have prospects for use in broadband photoconverters of natural light and in rapidly tunable photoanalyzers of linearly polarized light.