Abstract

AbstractPolyimide resists that can be developed with a basic aqueous solution were produced by simple mixtures of conventional polyamic acids and naphthoquinone diazides in which sulfonate groups are substituted at the 4‐position. The diazonaphthoquinones bearing electron‐withdrawing groups gave negative tone resists. On the other hand, those bearing electron‐donating groups gave positive tone resists. The difference in the resist behaviors depending on the photoactive structure was explained by crosslinking caused by photogenerated sulfonic acids. The thermal stability of polyimides prepared from the resists was almost the same as that of conventional polyimides.

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