Abstract
We report on the graphene-seeded growth and fabrication of photosensitive Cadmium telluride (CdTe)/graphene hybrid field-effect transistors (FETs) subjected to a post-growth activation process. CdTe thin films were selectively grown on pre-defined graphene, and their morphological, electrical and optoelectronic properties were systemically analyzed before and after the CdCl2 activation process. CdCl2-activated CdTe FETs showed p-type behavior with improved electrical features, including higher electrical conductivity (reduced sheet resistance from 1.09 × 10(9) to 5.55 × 10(7) Ω/sq.), higher mobility (from 0.025 to 0.20 cm2/(V·s)), and faster rise time (from 1.23 to 0.43 s). A post-growth activation process is essential to fabricate high-performance photosensitive CdTe/graphene hybrid devices.
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