Abstract
In this work, the characterization of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn3N2 and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage VT was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions. To the best of our knowledge, the characterization of Zn3N2 TFTs as phototransistors is presented for the first time.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
