Abstract
Low dark current is more desired in photodetector, that contributes to high photo-to-dark current ratio and high sensitivity. Therefore, in this paper, we use the edge-defined-film-fed (EFG)-grown iron (Fe)-doped Ga2O3 substrate to fabricate a solar-blind ultraviolet (UV) photodetector. Fortunately, the photodetector shows a low dark current of ∼10–13 A, which are more promised to advance the solar-blind photodetections. The responsivity (R) of 0.145 mA W−1, specific detectivity (D*) of 6 1010 cm Hz1/2 W−1 (Jones), linear dynamic region (LDR) of 75.56 dB and rise/decay time of 0.28 s/0.43 s are achieved in this Fe-doped β-Ga2O3 solar-blind UV photodetector.
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