Abstract
The behavior of CdTe as an infrared photodetector to operate at 400°C over the range between 0.8 and 1.2 μ was studied. It was shown that chlorine-doped CdTe indeed can be prepared to possess signal-to-noise ratios at 400°C of 50:1 at 50 μW/cm2 of illumination with a 1 kHz bandwidth. Furthermore, iridium has proven to be a stable contact, and 1000-hr life tests of Ir-contacted CdTe chips in hermetically sealed, gas filled T08 transistor headers showed no significant variations in the signal-to-noise ratios.
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