Abstract
We report the experiments of a plasmonic terahertz (THz) wave detector based on silicon (Si) field-effect transistors (FETs) in the nonresonant sub-THz (0.2 THz) regime. To investigate the effects of the overdamped charge asymmetry on responsivity (RV), a FET structure with the asymmetric source and drain area under the gate has been proposed. RV as a function of gate voltage in Si FET-based detectors integrated with an antenna has been successfully enhanced by the asymmetry ratio (ηa = WD/WS) of gate-overlapped drain width (WD) to source width (WS) in agreement with the nonresonant quasi-plasma wave detection theory. The experimentally measured photoresponse has been enhanced by about 36.2 times on average from various samples according to the 10-fold increase in ηa. The effect of the integrated bow-tie antenna on the performance enhancement has also been estimated as 60-fold at the maximum incident angle for the polarized THz wave source.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
